FDR6580 ; Input Capacitance (Ciss) (Max) @ Vds. 3829 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 1.8W (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional.

Specifications ; Vds - Drain-Source Breakdown Voltage: 20 V ; Id - Continuous Drain Current: 11.2 A ; Rds On - Drain-Source Resistance: 5.2 mOhms ; Vgs - Gate- ...

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching ...

FDR6580. N-Chennal 2.5V Specified PowerTrenchTM MOSFET. 1. 5. 6. 7. 8. 4. 3. 2. Page 2. FDR6580. FDR6580, Rev. A. Notes: 1. RθJA is the sum of the junction-to- ...

The FDR6580 is a MOSFET N-channel polarity device manufactured by Fairchild/ON Semiconductor. The device is mounted on a SuperSOT-8 package with an 8-SMD, Gull ...

FDR6580 MOSFET. Datasheet pdf. Equivalent. Type Designator: FDR6580 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...

Part #: FDR6580. Download. File Size: 87Kbytes. Page: 5 Pages. Description: N-Channel 2.5V Specified PowerTrench MOSFET.

Jun 2, 2024 · FDR6580 onsemi / Fairchild MOSFET SSOT-8 N-CH 2.5V datasheet, inventory & pricing.