IDSS. Zero Gate Voltage Drain Current. VDS = 16 V, VGS = 0 V. -. -. 1. μA. IGSSF. Gate to Source Leakage Current, Forward. VGS = 8 V, VDS = 0 V.
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This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the ...
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100PCS FDN340 FDN340P 340 FDN335 FDN335N 335N FDN338 FDN338P 338 SOT-23 MOS Field Effect Transistor Chip SMD. 1 | 1 sold. Color : FDN335N. FDN338P. FDN335N.
N-Channel 2.5V Specified PowerTrenchTM MOSFET · FDN335 datasheet pdf Fairchild Semiconductor Download FDN335 datasheet from. Fairchild Semiconductor, pdf
FDN335 datasheet - N-channel 2.5V Specified Powertrenchtm Mosfet
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This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the ...
FDN335 Datasheet. Part #: FDN335. Datasheet: 210Kb/8P. Manufacturer: Fairchild Semiconductor. Description: N-Channel 2.5V Specified PowerTrenchTM MOSFET.
Buy original and new FDN335 from FAIRCHILD at Lisleapex Electronic. N-Channel 2.5V Specified PowerTrenchTM MOSFET. Check the stock, prices, specifications, ...
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