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FDMC8882 ; Input Capacitance (Ciss) (Max) @ Vds. 945 pF @ 15 V ; FET Feature. - ; Power Dissipation (Max). 2.3W (Ta), 18W (Tc) ; Operating Temperature. -55°C ~ 150° ...
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
In stock
FDMC8882 onsemi / Fairchild MOSFET 30V N-Channel Power Trench 174 MOSFET datasheet, inventory, & pricing.
[PDF] FDMC8882 N-Channel Power Trench® MOSFET - Mouser Electronics
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This N-Channel MOSFET is produced using Fairchild. Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state ...
FDMC8882/D. MOSFET – N-Channel,. POWERTRENCH. ) 30 V, 16 A, 14.3 mohm. FDMC8882 ... FDMC8882. = Specific Device Code. WDFN8 3.3x3.3, 0.65P. CASE 511DR. Device.
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FDMC8882. Richardson RFPD #: FDMC8882. Description: Power MOSFET Transistor. Min/Mult: 3,000/1. Datasheet: FDMC8882 Data Sheet. ROHS Compliant. N-Channel Power ...
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The FDMC8882 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well ...
In stock
onsemi FDMC8882 MOSFETs. Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R. Download Datasheet. Symbols and Footprints. See all MOSFETs by onsemi.
SEK 11.02
The FDMC8882 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well ...
ONSEMI FDMC8882 | Transistor: N-MOSFET; unipolar; 30V; 16A; 18W; WDFN8 - This product is available in Transfer Multisort Elektronik.