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Fdg6321c Download — Fdg6321c Datasheet. You can find Fdg6321c Datasheet. Fdg6321c pinout. You can find Fdg6321c Datasheet. Update Datasheet Everyday. Fast & Simple Search. 8,000,000+ Users / Month. Distributors and Pricing. 400,000+ Searches / day.
These dual N & P−Channel logic level enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology.
In stock
FDG6321C ; FET Feature. Logic Level Gate ; Drain to Source Voltage (Vdss). 25V ; Current - Continuous Drain (Id) @ 25°C · 500mA, 410mA ; Rds On (Max) @ Id, Vgs.
$0.52 Out of stock
Specifications ; Maximum Operating Temperature: + 150 C ; Pd - Power Dissipation: 300 mW ; Channel Mode: Enhancement ; Series: FDG6321C.
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology.
In stock
Features & Applications. The FDG6321C is a 25 V 0.45 Ω Dual N & P Channel Digital Field Effect Transistor Available in a SC70-6 Package. It works at an ...
$0.20
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias ...
[PDF] FDG6321C Dual N & P Channel Digital FET - Mouser Electronics
www.mouser.com › datasheet › FD...
Nov 1, 1998 · These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary,.
$0.15 Out of stock
FDG6321C. Richardson RFPD #: FDG6321C. Description: Power MOSFET Transistor. Min/Mult: 6,000/1. Datasheet: FDG6321C Data Sheet. ROHS Compliant. Dual N & P ...
FDG6321C Datasheet. Page 2. Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing ...
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.