These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density,. DMOS technology.
$0.42 In stock
FDG6301N ; Drain to Source Voltage (Vdss). 25V ; Current - Continuous Drain (Id) @ 25°C · 220mA ; Rds On (Max) @ Id, Vgs. 4Ohm @ 220mA, 4.5V ; Vgs(th) (Max) @ Id.
$0.42 In stock
Specifications ; Maximum Operating Temperature: + 150 C ; Pd - Power Dissipation: 300 mW ; Channel Mode: Enhancement ; Series: FDG6301N.
FDG6301N−F085/D. Dual N-Channel, Digital FET. FDG6301N-F085. Features. • 25 V, 0.22 A ... FDG6301N−F085. FDG6301N. SC−88 (SC−70 6 Lead). (Pb−Free, Halogen ...
FDG6301N-F085 onsemi / Fairchild MOSFET Dual N-Chan Digital MOSFET; Automotive datasheet, inventory, & pricing.
$372.00 In stock
Buy onsemi FDG6301N in Reel. N-Channel 25 V 4 Ohm Dual Surface Mount Digital FET - SC-70-6 from Future Electronics.
$0.12 Out of stock
FDG6301N. Richardson RFPD #: FDG6301N. Description: Power MOSFET Transistor. Min/Mult: 6,000/1. Datasheet: FDG6301N Data Sheet. ROHS Compliant. Dual N-Channel ...
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features □ 25 ...
$0.09
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
$0.21 In stock
Buy FDG6301N - Onsemi - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV RoHS Compliant: Yes. Newark offers fast quotes, same day shipping, ...