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Single N-channel MOSFET in a 5mm x 6mm LFPAK package designed for compact and efficient designs. Learn More.
$300.52 30-day returns
FDG361N ; Input Capacitance (Ciss) (Max) @ Vds. 153 pF @ 50 V ; FET Feature. - ; Power Dissipation (Max). 420mW (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
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FDG361N ; Package: SC-88(SC-70-6) ; Description: 100V 600mA 420mW 500mΩ@600mA,10V 4V@250uA 1PCSNChannel SC-88(SC-70-6) MOSFETs ROHS ; Datasheet: Download ; Source ...
부품명: FDG361N. 다운로드. 파일 크기: 80Kbytes. 페이지: 5 Pages. 상세설명: N-Channel 100V Specified PowerTrenchMOSFET. 제조업체: Fairchild Semiconductor.
onsemi FDG361N technical specifications, attributes, and parameters. TRANS MOSFET N-CH 100V 0.6A 6PIN SC-70. N-Channel 100 V 600mA (Ta) 420mW (Ta) Surface Mount ...
Part #: FDG361N. Download. File Size: 80Kbytes. Page: 5 Pages. Description: N-Channel 100V Specified PowerTrenchMOSFET.
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50Pcs/Lot FDG361N MOSFET N-CH 100V 0.6A MCPH6 SOT363 SC70-6 SOT-363 Original. Color : FDG361N. FDG361N. Delivery. Shipping: €4.83. Estimated delivery between ...
FDG361N Transistor Datasheet, FDG361N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.
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FDG361N SC-70-6 MOSFET N-CH 100V 0.6A SC70-6 ; Vgs(th) (Max) @ Id, 4V @ 250?A ; Gate Charge (Qg) @ Vgs, 5nC @ 10V ; Input Capacitance (Ciss) @ Vds, 153pF @ 50V.
$0.11
FDG361N - N-Channel 100V Specified PowerTrench MOSFET N-Channel 100V Specified PowerTrenchMOSFET CAP CER 68PF 1KVDC U2J 1206 ; File Size, 75.45K / 5 Page ; Maker