onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its ...
This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
FDG313N onsemi | Discrete Semiconductor Products - DigiKey
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Order today, ships today. FDG313N – N-Channel 25 V 950mA (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6) from onsemi. Pricing and Availability on millions of ...
FDG313N Product details ... This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology.
MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) ...
FDG313N Datasheet(HTML) 4 Page - Fairchild Semiconductor ; Typical Characteristics (continued) ; t 2 ; = 260.
€9.20
MPN: FDG313N. Case: SC70-6. N-FET 25V 1A 0.7W. Manufactured: FAIRCHILD SEMICONDUCTOR.
FDG313 is a Power MOSFET Transistor. General Data; Properties; Package. FDG313N - General Data. Part Number, FDG313N.
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.