SGD 0.56
FDC6322C ; Vgs(th) (Max) @ Id. 1.5V @ 250µA ; Gate Charge (Qg) (Max) @ Vgs. 0.7nC @ 4.5V ; Input Capacitance (Ciss) (Max) @ Vds. 9.5pF @ 10V ; Power - Max. 700mW.
Specifications ; Vds - Drain-Source Breakdown Voltage: 25 V ; Id - Continuous Drain Current: 220 mA, 460 mA ; Rds On - Drain-Source Resistance: 5 Ohms ; Vgs - Gate- ...
Part #: FDC6322C. Download. File Size: 96Kbytes. Page: 7 Pages. Description: Dual N & P Channel , Digital FET. Manufacturer: Fairchild Semiconductor.
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FDC6322 is a Power MOSFET Transistor. Manufacturer, ON Semiconductor. Category, Power MOSFETs. Datasheet, Datasheet PDF Document. FDC6322C - Properties ...
These dual & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This ...
These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology ...
These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
FDC6322 Datasheet. Part #: FDC6322. Datasheet: 96Kb/7P. Manufacturer: Fairchild Semiconductor. Description: Dual N & P Channel , Digital FET. 2 Results.
FDC6322C ; Operating Temperature : -55°C ~ 150°C (TJ) ; Package / Case : SOT-23-6 Thin, TSOT-23-6 ; Part Status : Obsolete ; Power - Max : 700mW ; Rds On (Max) @ Id, ...