Rating. Symbol. Value. Unit. Drain to Source Voltage. VDSS. 60. V. Gate to Source Voltage. VGS. ±20. V. Drain Current Continuous (VGS = 10 V).
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FDC5661N-F085 ; Input Capacitance (Ciss) (Max) @ Vds. 763 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 1.6W (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
N-Channel PowerTrench ® MOSFET, Logic Level, 60V, 4A, 60mΩ.
FDC5661N-F085/D. FDC5661N-F085. N-Channel Logic Level PowerTrench® MOSFET. 60V, 4A, 60mΩ. Features. ▫ RDS(on) = 47mΩ at VGS = 10V, ID = 4.3A. ▫ RDS(on) = 60mΩ ...
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These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include ...
Buy onsemi FDC5661N-F085 in Reel. FDC5661N Series 60 V 4.3 A 60 mOhm N-Ch Logic Level Power Trench Mosfet - SSOT-6 from Future Electronics.
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Buy FDC5661N-F085 - Onsemi - Power MOSFET, N Channel, 60 V, 4.3 A, 0.038 ohm, SuperSOT, Surface Mount. Newark offers fast quotes, same day shipping, ...
$1,139.22
FDC5661N_F085 ; Continuous Drain Current Id, 4 ; Drain Source On State Resistance, 47 ; Drain Source Voltage Vds, 60 ; MSL Level, MSL 1 - Unlimited ; No. of Pins, 6.
FDC5661N_F085 Rev. A www.fairchildsemi.com. 1. FDC5661N_F085. N-Channel Logic Level PowerTrench® MOSFET. 60V, 4A, 60mΩ. Features. ▫ RDS(on) = 47mΩ at VGS = 10V ...
Download the FDC5661N-F085 datasheet from onsemi. N-Channel PowerTrench® MOSFET, Logic Level, 60V, 4A, 60mΩ.