FDB603AL ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 30 V ; Current - Continuous Drain (Id) @ 25°C · 33A (Tc) ; Drive Voltage (Max Rds On, ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 33 A ; Rds On - Drain-Source Resistance: 22 mOhms ; Vgs - Gate-Source ...
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This ...
FDB603AL MOSFET. Datasheet pdf. Equivalent. Type Designator: FDB603AL Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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Specifications ; FET Type, N-Channel ; Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 30 V ; Current - Continuous Drain (Id) @ 25°C, 33A (Tc) ...
N-Channel Logic Level Enhancement Mode Field Effect Transistor · FDB603AL datasheet pdf Fairchild Semiconductor Download FDB603AL datasheet from
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te... Features ...
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,.
FDB603AL ; Transistor N-MOSFET Logic 30V 33A 50W 18mΩ, TO-263. NS. (You save ). Write a Review. SKU: 1170. Current Stock: Quantity: Decrease Quantity:
FDB603AL PART ELECTRONICS ; Quantity in stock, 179570 Pieces ; Market Price, - ; Our Better Price, Send by email: sales@part-elec.com ; Delivery Time, 1 day (can ...