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FDB6021P ; Input Capacitance (Ciss) (Max) @ Vds. 1890 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 37W (Tc) ; Operating Temperature. -65°C ~ 175°C (TJ).
This P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized ... Features, • –28 A, – ...
General Description This P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for power management applications.
FDB6021P. FDB6021P. 13”. 24mm. 800 units. FDP6021P/FDB6021P. Page 2. FDP6021P/FDB6021P Rev. B(W). Electrical Characteristics. TA = 25°C unless otherwise noted.
FDB6021P 20V P-channel 1.8V Specified Powertrench MOSFET . This P-Channel power MOSFET uses Fairchilds low voltage PowerTrench process.
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FDB6021P ; Description: 20V 28A 30mΩ@14A,4.5V 37W P Channel TO-263 MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: SMT Assembly. A PCB assembly ...
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Offer FDB6021P onsemi from Kynix Semiconductor Hong Kong Limited. Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 28A TO-263AB.
Equivalent. Type Designator: FDB6021P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 37 W
FDB6021 Datasheet. 80Kb/5P. Part #: FDB6021P. Manufacturer: Fairchild Semiconductor. Description: 20V P-Channel 1.8V Specified PowerTrench MOSFET.
FDB6021 is a Power MOSFET Transistor. General Data; Properties; Package. FDB6021P - General Data. Part Number, FDB6021P.