FDB3632 onsemi | Discrete Semiconductor Products - DigiKey
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FDB3632 ; Drain to Source Voltage (Vdss). 100 V ; Current - Continuous Drain (Id) @ 25°C · 12A (Ta), 80A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 6V, 10V ; Rds ...
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery ...
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FDB3632 onsemi / Fairchild MOSFET N-Channel PowerTrench datasheet, inventory, & pricing.
ID. Drain Current. - Pulsed. Figure 4. A. EAS. Single Pulse Avalanche Energy (Note 1). 337. mJ. PD. Power Dissipation. (TC = 25°C).
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The FDB3632 is a FDB3632 Series 100 V 9 mΩ N-Channel Power Trench Mosfet TO-263AB Package . Product Fatures : rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A; Qg( ...
$1,518.00
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; ...
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The FDB3632 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for use in synchronous rectification, battery protection circuit ...
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FDB3632. Richardson RFPD #: FDB3632. Description: Power MOSFET Transistor. Min/Mult: 800/1. Datasheet: FDB3632 Data Sheet. ROHS Compliant. N-Channel PowerTrench ...
Part #: FDB3632. Download. File Size: 267Kbytes. Page: 11 Pages. Description: N-Channel PowerTrench MOSFET 100V, 80A, 9m?