Symbol. Parameter. FDB035N10A. Unit. VDSS. Drain to Source Voltage. 100. V. VGSS. Gate to Source Voltage. ±20. V. ID. Drain Current.
FDB035N10A ; Input Capacitance (Ciss) (Max) @ Vds. 7295 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 333W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining ...
62.5. Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max. 40. Page 2. ©2011 Fairchild Semiconductor Corporation. FDB035N10A Rev.
$2,792.00
Buy onsemi FDB035N10A in Reel. FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3 from Future Electronics.
FDB035N10A onsemi / Fairchild MOSFET 100V N-Channel PowerTrench MOSFET datasheet, inventory, & pricing.
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Buy FDB035N10A - Onsemi - MOSFET, N-CH, 214A, 100V, TO-263. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, ...
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This N-Channel MOSFET is produced using advanced PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior ...
$3,948.00
This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench® process that has been tailored to minimize the on-state resistance while ...