Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Drain-Source Diode Characteristics and Maximun Ratings. Drain-Source Diode Forward Current.
Apr 27, 2024 · CET-MOS Technology Corp's CEP20P06 is a n-channel enhancement mode field effect transistor. in the fet transistors, mosfets category.
CEP20P06 Product details. FEATURES □ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. □ Super high dense cell design for extremely low RDS ...
CEP20P06 www.VBsemi.com. FEATURES. • TrenchFET® Power MOSFET. • 100 % UIS ... CEP20P06 www.VBsemi.com. 2. 服务热线：400-655-8788. Page 3. TYPICAL CHARACTERISTICS ...
$18.89
10PCS Original Genuine CEP20P06 TO-220 ; Sold by. Jiecheng Jingke Semiconductor ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt.
Part #, CEP20P06_10. Download, CEP20P06 Click to download. File Size, 441.65 Kbytes. Page, 4 Pages. Manufacturer, CET [Chino-Excel Technology].
$0.19
Color : CEP05P03 ; Delivery. Shipping: US $0.91. Estimated delivery between Jul 25 - Aug 09 ; Service Buyer protection ; Payment methods. Security guaranteed.
CEP20P06-VB is a TO220 packaged Single-P-Channel channel MOSFETs. The product features Trench Technology, with Vds at -60V; Vgs at 20（±V）; and Ida at -40A ...
CEP20P06 MOSFET. Datasheet pdf. Equivalent. Type Designator: CEP20P06 Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation ( ...