Thermal Resistance Junction-case. Max. 1.38. °C/W. Max. 62.5. °C/W. AVALANCHE CHARACTERISTICS. Symbol. Value. Unit. 21. IAR. EAS. EAR. JAR. Parameter.
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BUZ21 ; Input Capacitance (Ciss) (Max) @ Vds. 1300 pF @ 25 V ; FET Feature. - ; Mounting Type. Through Hole ; Supplier Device Package. TO-220AB.
Part #: BUZ21. Download. File Size: 65Kbytes. Page: 8 Pages. Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated).
BUZ21 MOSFET. Datasheet pdf. Equivalent. Type Designator: BUZ21 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
€3.28 In stock
Transistor, BUZ21, IPS. This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, ...
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Part Number:BUZ21. · The parts you need…… when you need them! · A worldwide network of suppliers with the ability to source your needs.
BUZ 21. SIPMOS ® Power Transistor. • N channel. • Enhancement mode. • Avalanche ... BUZ 21. Electrical Characteristics, at Tj = 25°C, unless otherwise specified.
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10PCS BUZ21 TO-220 200V 21A. 1/1. 0. US $4.75/ lot. 2+ pieces, extra 1% off. (10 Pieces). Price shown before tax. Delivery guarantee. 10PCS BUZ21 TO-220 200V ...
BUZ21 Datasheet, BUZ21 N-Channel MOSFET Transistor Datasheet, buy BUZ21 Transistor.