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Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 50 V ; Id - Continuous Drain Current: 23 A.
BUZ10A. ·ELECTRICAL CHARACTERISTICS (TC=25℃). SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. V(BR)DSS. Drain-Source Breakdown Voltage VGS= 0; ID= 1mA. 50. V.
BUZ10A MOSFET. Datasheet pdf. Equivalent. Type Designator: BUZ10A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Jan 3, 2019 · BUZ10A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ10A Voss 50 V ROS(on) 0.12 D 10 17 A • HIGH SPEED SWITCHING • LOW ROS (ON) ...
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Order today, ships today. BUZ10 – N-Channel 50 V 23A (Tc) 75W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of ...
BUZ10A Datasheet. Part #: BUZ10A. Datasheet: 65Kb/2P. Manufacturer: Inchange Semiconductor Company Limited. Description: Easy driver for cost effective ...
Symbol. Parameter. Value. Unit. VDS. Drain-source Voltage (VGS = 0). 50. V. VDGR. Drain- gate Voltage (RGS = 20 kΩ). 50. V. VGS. Gate-source Voltage.
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2 Pieces: 10A SGS BUZ10A ; Quantity. More than 10 available ; Item Number. 252480761929 ; Brand. ELECTRONIC EXPEDITERS ; Country/Region of Manufacture. Unknown ...
Part #: BUZ10A. Download. File Size: 65Kbytes. Page: 2 Pages. Description: Easy driver for cost effective application. Manufacturer: Inchange Semiconductor ...
BUZ10 SPECIFICATIONS ; Drain Current-Max (ID), 23.0 A ; Drain-source On Resistance-Max, 0.07 ohm ; DS Breakdown Voltage-Min, 50.0 V ; Feedback Cap-Max (Crss), 150.0 ...