Aug 18, 2015 · VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;. RG(ext) = 10 Ω; Tj = 25 °C. -. 57. 86 ns. LD internal drain inductance from drain lead 6 mm from package to.
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Specifications ; Id - Continuous Drain Current: 20 A ; Rds On - Drain-Source Resistance: 68 mOhms ; Vgs - Gate-Source Voltage: - 10 V, + 10 V ; Vgs th - Gate-Source ...
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
$1.14
BUK9675-100A,118 Nexperia $1.1355 - 100V 23A 99W 72mΩ@10V,10A 2V@1mA 1PCSNChannel D2PAK MOSFETs ROHS datasheet, price, inventory C427520.
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