Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
BUK9610-100B,118 ; Current - Continuous Drain (Id) @ 25°C · 75A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 5V, 10V ; Rds On (Max) @ Id, Vgs. 9.7mOhm @ 25A, 10V.
Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. Learn More.
Jan 31, 2011 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
Part #: BUK9610-100B. Download. File Size: 838Kbytes. Page: 14 Pages. Description: N-channel TrenchMOS logic level FET. Manufacturer: Nexperia B.V. All ...
$0.87
BUK9610-100B,118 by Nexperia. Nexperia BUK9610-100B,118. NEXPERIA - BUK9610-100B, 118 - Trans MOSFET N-CH 100V 110A Automotive 3-Pin(2+Tab) D2PAK T/R. $ 0.871.
Oct 8, 2002 · BUK9510-100B in SOT78 (TO-220AB). BUK9610-100B in SOT404 (D2-PAK). 1.2 Features. 1.3 Applications. 1.4 Quick reference data. 2. Pinning ...
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BUK9610-100B Specifications ; FET Type, N-Channel ; Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 100V ; Current - Continuous Drain (Id) @ 25°C ...
Product, VB Package, VDS(V), VGS, Vthyp（V）, ID(A), Technology. BUK9610-100B, TO263, 100V, 20（±V）, 2.5V, 100A. Similar type recommendation.
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BUK9610-100B,118 of Nexperia are available at X-ON Electronics Components. X-ON offers better pricing, availability, various range and buying options of ...