BUK9608-55B ... Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been ...
BUK9608-55A ... Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been ...
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Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 55 V ; Id - Continuous Drain Current: 110 A.
BUK9608-55B,118 ; Input Capacitance (Ciss) (Max) @ Vds. 5280 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 203W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
In stock
BUK9608-55B,118 ; Input Capacitance (Ciss) (Max) @ Vds. 5280 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 203W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
$796.00
Buy Nexperia BUK9608-55B,118 in Reel. BUK9608 Series 55 V 75 A 7 mOhm N-Channel TrenchMOS Logic Level FET - TO-263-3 from Future Electronics.
NZ$3.62
Manufacturer Part No. BUK9608-55B,118. Manufacturer: NEXPERIA. Order Code: 3439692. Channel Type: N Channel. Drain Source Voltage Vds:.
GENERAL DESCRIPTION. QUICK REFERENCE DATA. N-channel enhancement mode logic. SYMBOL. PARAMETER. MAX. UNIT level field-effect power transistor in a.
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MOSFET, AEC-Q101, N-CH, 55V, 75A, TO-263 ROHS COMPLIANT: YES ; Minimum order quantity: 1 ; Order multiple quantity: 1 ; Price: $2.23 ; Availability. 3,479 In stock.
GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using 'trench' ...