Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
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Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. Learn More.
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BUK9575-55A,127 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 55 V ; Current - Continuous Drain (Id) @ 25°C · 20A (Tc) ; Drive Voltage (Max ...
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features
Feb 8, 2011 · Ptot total power dissipation. Tmb = 25 °C; see Figure 2. -. 62. W. Tstg storage temperature. -55. 175. °C. Tj junction temperature. -55.
Part #: BUK9575-55. Download. File Size: 64Kbytes. Page: 8 Pages. Description: TrenchMOS transistor Logic level FET. Manufacturer: NXP Semiconductors.
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10PCS Original Genuine BUK9575-55A TO-220 ; Ships from. Jiecheng Jingke Semiconductor ; Sold by. Jiecheng Jingke Semiconductor ; Returns. Eligible for Return, ...
Features, Applications. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.
BUK9575-55A datasheet. BUK9575-55A manufactured by: NXP Semiconductors · N-channel TrenchMOS logic level FET · BUK9575-55A datasheet pdf NXP Semiconductors
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The BUK9575-55 is MOSFET N-CH 55V 20A TO220AB manufactured by PHILIPS. The BUK9575-55 is available in TO-220-3 Package, is part of the FETs - Single, , and with ...