BUK9514-55A ... Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been ...
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BUK9514-55A,127 ; Power Dissipation (Max). 149W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-220AB.
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Specifications ; Manufacturer: Nexperia ; Product Category: MOSFET ; RoHS: Details ; Vds - Drain-Source Breakdown Voltage: 55 V.
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Specifications ; Vds - Drain-Source Breakdown Voltage: 55 V ; Id - Continuous Drain Current: 73 A ; Rds On - Drain-Source Resistance: 13 mOhms ; Vgs - Gate-Source ...
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BUK9514-55A,127 ; Power Dissipation (Max). 149W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-220AB.
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features
Pricing and availability from all the top distributors and hundreds more. View BUK9514-55 Nxp Semiconductors datasheet, CAD models, lifecycle, RoHS, ...
Part #: BUK9514-55. Download. File Size: 65Kbytes. Page: 8 Pages. Description: TrenchMOS transistor Logic level FET. Manufacturer: NXP Semiconductors.
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BUK9514-55A,127 TO-220AB MOSFET N-CH 55V 73A TO220AB ; FET Feature, Logic Level Gate ; Drain to Source Voltage (Vdss), 55V ; Current - Continuous Drain (Id) @ 25 C ...
BUK9514-55. Logic level FET. GENERAL DESCRIPTION. QUICK REFERENCE DATA. N-channel enhancement mode logic. SYMBOL. PARAMETER. MAX. UNIT level field-effect power ...