Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
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Specifications ; Height: 9.4 mm ; Length: 10.3 mm ; Product Type: MOSFET ; Rise Time: 135 ns.
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
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Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. Learn More.
Jan 31, 2011 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
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The BUK9507-30B,127 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors.
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5PCS BUK9507-30B'127 MOSFET N-CH 30V 75A TO220AB BUK9507-30B 9507 BUK9507 Best O ; MTX-STORE(KNW) (19248) ; Time left. 11d 5h11 days 5 hours ; Est. delivery. Thu, ...
UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology which features very low ID Drain current (DC) ...
BUK9507-30B SPECIFICATIONS ; Drain Current-Max (ID), 75.0 A ; Drain-source On Resistance-Max, 0.009 ohm ; DS Breakdown Voltage-Min, 30.0 V ; FET Technology, METAL- ...
