Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
$9.99 delivery 30-day returns
Specifications ; Vds - Drain-Source Breakdown Voltage: 55 V ; Id - Continuous Drain Current: 48 A ; Rds On - Drain-Source Resistance: 20 mOhms ; Vgs - Gate-Source ...
30-day returns
BUK9222-55A,118 ; Input Capacitance (Ciss) (Max) @ Vds. 2210 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 103W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
Feb 1, 2011 · Ptot total power dissipation. Tmb = 25 °C; see Figure 2. -. 103. W. Tstg storage temperature. -55. 175. °C. Tj junction temperature. -55.
$4.50 6-day delivery In stock
This is truly a plug and play fix. Plugged it in, Issue resolved, no more waiting on $1200 part or $800+ calibration. THANK YOU! Will be telling others about ...
30-day returns
BUK9222-55A,127 ; Input Capacitance (Ciss) (Max) @ Vds. 2210 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 103W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
Out of stock
BUK9222-55A Commonly used vulnerable transistor. BUK9222-55A Commonly used vulnerable transistor. Weight, 0.001 kg. Dimensions, 100 × 100 × 100 mm. Reviews.
$0.31 Free delivery over $500
Base PN. BUK9222-55A ; Life Cycle. Active ; Package Type. SOT428 ; Package Pin Count. 3 ; RoHS Compliance. Yes.
MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): ...