UNIT insulated gate bipolar power transistor in a plastic envelope,. V(CL)CER. Collector-emitter clamp voltage. 350. 400. 500. V intended for automotive ...
Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has ...
BUK856-400IZ IGBT. Datasheet pdf. Equivalent. Type Designator: BUK856-400IZ Type: IGBT Type of IGBT Channel: N Maximum Power Dissipation (Pc), W: 125
Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has ...
GENERAL DESCRIPTION. QUICK REFERENCE DATA. Protected N-channel logic-level. SYMBOL PARAMETER. MIN. TYP. MAX. UNIT insulated gate bipolar power.
BUK856-400IZ NXP Semiconductors - Distributors and Price ...
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Descriptions of NXP Semiconductors BUK856-400IZ provided by its distributors. French Electronic Distributor since 1988. ACDS. 20 A N-CHANNEL IGBT TO-220AB.
10PCS/LOT BUK856-400IZ BUK856-800A BUK856-450IX BUK9504-40A BUK9505-30A BUK9506-30 BUK9506-40B BUK9506-55A BUK9506-55B TO-220. Current : BUK856-400IZ.
BUK856 Datasheet. Part #: BUK856-400IZ. Datasheet: 81Kb/8P. Manufacturer: NXP Semiconductors. Description: Insulated Gate Bipolar Transistor Protected ...
GENERAL DESCRIPTION. QUICK REFERENCE DATA. Fast-switching N-channel insulated. SYMBOL. PARAMETER. MAX. UNIT gate bipolar power transistor in a.
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT, BUK856-400IZ datasheet pdf Philips Download BUK856-400IZ datasheet from. Philips, pdf