Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 40 V ; Id - Continuous Drain Current: 75 A ; Rds On - Drain-Source Resistance: 3.1 mOhms ; Vgs - Gate-Source ...
Jul 28, 2016 · BUK763R1-60E. N-channel TrenchMOS standard level FET. BUK763R1-60E. All information provided in this document is subject to legal disclaimers ...
NEXPERIA BUK763R1-60E,118 | Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W - This product is available in Transfer Multisort Elektronik.