Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Rev. 01-18 ...

Specifications ; Vds - Drain-Source Breakdown Voltage: 55 V ; Id - Continuous Drain Current: 54 A ; Rds On - Drain-Source Resistance: 20 mOhms ; Vgs - Gate-Source ...

Order today, ships today. BUK7620-100A,118 – N-Channel 100 V 63A (Tc) 200W (Tc) Surface Mount D2PAK from NXP Semiconductors. Pricing and Availability on ...

Part #: BUK7621-30. Download. File Size: 55Kbytes. Page: 7 Pages. Description: TrenchMOS transistor Standard level FET. Manufacturer: NXP Semiconductors.

VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;. RG(ext) = 10 ... Type number BUK7620-100A separated from data sheet BUK7520_7620_100A-01. ... BUK7620-100A,118.

BUK7620-30. Hxd Electronics Co. 81521, 12, -, -. Part information. N-channel enhancement mode field-effect power transistor in a plastic package using ...

This MOSFET has a maximum power dissipation of 118W (Tc) and a drain-source breakdown voltage of 55V. The continuous drain current at 25°C is 54A (Tc), and the ...

Datasheet pdf. Equivalent. Type Designator: BUK7620-55A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...