Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
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BUK7606-75B,118 Nexperia MOSFET HIGH PERF TRENCHMOS datasheet, inventory, & pricing.
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Order today, ships today. BUK7606-75B,118 – N-Channel 75 V 75A (Tc) 300W (Tc) Surface Mount D2PAK from Nexperia USA Inc.. Pricing and Availability on ...
Feb 3, 2011 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK7606-75B,118NEXPERIA ; Gate-source voltage. ±20V ; On-state resistance. 11.8mΩ ; Mounting. SMD ; Gate charge. 91nC ; Kind of package. reel, tape.
Description, Details, Operation. Product Category, Power Mosfet. Package/Enclosure, SOT404. Output capacitance, 845pF. Operating temperature, 175℃.
$4.05 $7 6–14 day delivery 30-day returns
BUK7606-75B,118 D2PAK MOSFET N-CH 75V 75A D2PAK ; Gate Charge (Qg) @ Vgs, 91nC @ 10V ; Input Capacitance (Ciss) @ Vds, 7446pF @ 25V ; Power - Max, 300W ; Mounting ...
BUK7606-75B MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK7606-75B Type of Transistor: MOSFET Type of Control Channel: N ...
Product Information ; FET Type, N-Channel ; Vgs (Max), ±20V ; Technology, MOSFET (Metal Oxide) ; FET Feature, - ; Mounting Type, Surface Mount.