Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 23 A.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
BUK7575-100A,127 ; Power Dissipation (Max). 99W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-220AB.
Jul 30, 2009 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
Part #: BUK7575-100A. Download. File Size: 139Kbytes. Page: 15 Pages. Description: TrenchMOS standard level FET. Manufacturer: NXP Semiconductors.
Nexperia BUK7575-100A,127. N CH MOSFET, TRENCH AUTO, 100V, 75A, 3TO220AB; Transistor Polarity: N Channel; Co. Obsolete.
NXP Semiconductors BUK7575-100A. N-channel TrenchMOS standard level FET ; Fig 5. Output characteristics: drain current as a. function of drain-source voltage; ...
Download the BUK7575-100A,127 datasheet from Nexperia. N CH MOSFET, TRENCH AUTO, 100V, 75A, 3TO220AB; Transistor Polarity: N Channel; Co.
In stock
Manufacturer: NXP Part Number: BUK7575-100A Amps: 23 Voltage: 100 Watts: 99 Package: TO-220AB Mounting: Through Hole Lead/Terminal Type: Radial Number ...
The BUK7575-100A is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified ...