BUK7528-55A ... Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been ...
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state ...
BUK7528-55A,127 ; Power Dissipation (Max). 99W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-220AB.
Specifications ; Manufacturer: Nexperia ; Product Category: MOSFET ; RoHS: Details ; Vds - Drain-Source Breakdown Voltage: 55 V.
BUK7528-55. Standard level FET. STATIC CHARACTERISTICS. Tj= 25˚C unless otherwise specified. SYMBOL PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. V(BR)DSS. Drain ...
BUK7528-55 MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK7528-55. Type of Transistor: MOSFET Type of Control Channel: N ...
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BUK7528-55,127 ; FET Type. N-Channel ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 55 V ; Current - Continuous Drain (Id) @ 25°C · 40A (Tc).
Apr 21, 2011 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
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TrenchMOS transistor Standard level FET · BUK7528-55 datasheet pdf Philips Download BUK7528-55 datasheet from. Philips, pdf