GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
BUK7510-30 MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK7510-30. Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power ...
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Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 110 A ; Rds On - Drain-Source Resistance: 10 mOhms ; Vgs - Gate-Source ...
BUK7510-30. Standard level FET. GENERAL DESCRIPTION. QUICK REFERENCE DATA. N-channel enhancement mode. SYMBOL. PARAMETER. MAX. UNIT standard level field-effect ...
BUK7510-30 Datasheet(PDF) 6 Page - NXP Semiconductors ; Part #, BUK7510-30 ; Description, TrenchMOS transistor Standard level FET ; Download, 8 Pages.
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BUK7510-100B,127 ; Input Capacitance (Ciss) (Max) @ Vds. 6773 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 300W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
buk7510-30 1 Datasheet, Design, MOSFET, Power. buk7510-30 1 RoHS, Compliant, Service, Triacs, Semiconductor. buk7510-30 1 Database, Innovation, IC, Electricity.
BUK7510-30 Trenchmos Transistor Standard Level Fet. BUK7511-55A BUK7511-55A ... 30V 2.1W Surface Mount; MOSFET P-CH D-S 30V DPAK. s: Mounting Type: Surface ...