GENERAL DESCRIPTION. QUICK REFERENCE DATA. N-channel enhancement mode. SYMBOL. PARAMETER. MAX. MAX. UNIT logic level field-effect power.
BUK553. Drain-source voltage. Drain current (DC). Total power dissipation. Junction temperature. Drain-source on-state resistance;. VGS = 5 V. MAX. -60A. 60. 21.
9PCS BUK553-60A Encapsulation:TO220AB,PowerMOS transistor Logic level FET ; Returns. Accepted within 60 days. Buyer pays return shipping ; Shop with confidence.
Part #, BUK553-60B. Download, BUK553-60B Click to download. File Size, 97.45 Kbytes. Page, 2 Pages. Manufacturer, NJSEMI [New Jersey Semi-Conductor Products ...
£2.50
BUK553-60B PHILIPS POWER MOSFET TO-220 TRANSISTOR ; LANGREX (85315) ; Approx. $3.11. + $6.22 shipping ; Shipping and Returns · International shipment of items may ...
Features, Applications. N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use ...
BUK553-60A MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK553-60A Type of Transistor: MOSFET Type of Control Channel: N ...
N channel enhancement mode. SYMBOL. PARAMETER. MAX. MAX. UNIT logic level field effect power transistor in a plastic envelope. BUK553.
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS) ...
BUK553-60A Powermos Transistor Logic Level Fet: 60v, 21a . N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.