N channel enhancement mode. SYMBOL. PARAMETER. MAX. MAX. UNIT logic level field effect power transistor in a plastic envelope. BUK553. 100A. 100B.
100. nA. RDS(ON). Drain-source on-state. VGS = 5 V;. BUK553-100A. -. 0.17. 0.18. Ω resistance. ID = 6.5 A. BUK553-100B. -. 0.20. 0.22. Ω. DYNAMIC ...
BUK553-100B MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK553-100B Type of Transistor: MOSFET Type of Control Channel: N ...
BUK553-100A/B Transistor MOSFET Sot78 . N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.