GENERAL DESCRIPTION. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in.
GENERAL DESCRIPTION. QUICK REFERENCE DATA. N-channel enhancement mode. SYMBOL. PARAMETER. MAX. MAX. UNIT logic level field-effect power.
BUK552-100A MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK552-100A Type of Transistor: MOSFET Type of Control Channel: N ...
PHILIPS / NXP BUK552-100A spec. device package type: to-220ab; package: tube; item per pack: 1; Width: 0.17 IN, Height: 0.36 IN, Length: 0.37 IN.
BUK552-100A Powermos Transistor Logic Level Fet: 100v, 10a . N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
[10pcs] BUK552-100A N-MOS 100V 10A 60W TO220 CUT ; Marke. PHILIPS SEMICONDUCTORS ; Accurate description. 5.0 ; Reasonable shipping cost. 4.8 ; Shipping speed. 5.0.