GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The deviceis intended foruse inSwitched Mode ...

Nov 3, 1996 · GENERAL DESCRIPTION. QUICK REFERENCE DATA. N-channel enhancement mode. SYMBOL. PARAMETER. MAX. MAX. UNIT field-effect power transistor in a.

BUK473-100A MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK473-100A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power ...

BUK473-100A Datasheet(PDF) 1 Page - NXP Semiconductors ; Download, 7 Pages ; Scroll/Zoom. 1. Zoom In 100% Zoom Out ; Manufacturer, PHILIPS [NXP Semiconductors].

buk473-100a-b datasheet pdf. POWER MOSFET, IGBT, IC, TRIACS DATABASE ... The BUK473 -100A -100B device is intended foruse in Switched VDS Drain-source ...

BUK473-100A ; Description, N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device... ; Features, lse peak value) ...

U · 30V ; R · <0.16Ω/5A ; P · 25W ; TON/T · 35/100nS ; the BUK473-100A is a silicon N - MOSFET transistor, Uds=100V, Ids=9A, applications: VFET.

Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-100A/B GENERAL DESCRIPTION N-channel enhancement mode ...

Symbol elementu: BUK473-100A. Opis: PowerMOS transistor Isolated version of BUK453-100A/B. Pobierz: BUK473-100A.pdf. Rozmiar pliku: 76 KB / 7 stron.