BUK436-1000B SPECIFICATIONS ; Configuration, SINGLE ; Drain Current-Max (ID), 3.1 A ; Drain-source On Resistance-Max, 5.0 ohm ; DS Breakdown Voltage-Min, 1000.0 V.
$8.30
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BUK436 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),. 6.2 ...
£11.99
Weight, 0.01 kg. Case, TO3P. Type, Transistor. Manufacturer, NXP Semiconductors. Vbr DSS, 1.0k. Vbr GSS, 30. Max. PD (W), 125. Ciss Max. (F), 1.25n.
In stock
2pcs PHILIPS BUK436-1000B TO-220 N-Channel Enhancement MOSFET USA ship ; Condition. New ; Item Number. 192932232436 ; Accurate description. 4.8 ; Reasonable ...
Transistor BUK436-1000B. Datasheet. Datasheet Rev. 1.0 – 10/20 – data without warranty / liability. Page 3. OEM:Philips. Transistor BUK436-1000B. Datasheet.
BUK436-1000BS Datasheet. Part #: BUK436-800A. Datasheet: 69Kb/7P. Manufacturer: NXP Semiconductors. Description: PowerMOS transistor. 2 Results.
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Description: BUK436-1000B is a N-channel enhancement mode power field effect transistor (FET) manufactured by Philips. Features: - Low on-state resistance ...
Color : BUK436W-1000B ; Delivery. Shipping: 143円. Estimated delivery between May 15 - 30 ; Service Buyer protection ; Payment methods. Security guaranteed ; Item ...
$7.56
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