BUK436-1000B SPECIFICATIONS ; Configuration, SINGLE ; Drain Current-Max (ID), 3.1 A ; Drain-source On Resistance-Max, 5.0 ohm ; DS Breakdown Voltage-Min, 1000.0 V.
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BUK436-1000A Transistor - CASE: TO218 MAKE: Generic ; Item Number. 123874657249 ; Model. BUK436-1000A ; Accurate description. 4.8 ; Reasonable shipping cost. 5.0.
In stock
10 x BUK436-1000A PowerMOS transistor TO-220 ; Quantity. More than 10 available ; Item Number. 184342864792 ; Brand. Unbranded ; Accurate description. 4.8.
BUK436-1000BS Datasheet. Part #: BUK436-800A. Datasheet: 69Kb/7P. Manufacturer: NXP Semiconductors. Description: PowerMOS transistor. 2 Results.
$22.00
10PCS Original Genuine BUK436-1000A TO-218 ; Sold by. Jiecheng Jingke Semiconductor ; Returns. Eligible for Return, Refund or Replacement within 30 days of ...
Transistor BUK436-1000A. Datasheet. Silicon N-MOSFET Transistor. BUK436-1000A. 1000V / 3.5A. DATASHEET. OEM – Philips. Source: Philips Databook MOSFET 1989.
BUK436 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),. 6.2 ...
£11.99
BUK436-1000B ; Weight, 0.01 kg ; Case, TO3P ; Type, Transistor ; Manufacturer, NXP Semiconductors ; Vbr DSS, 1.0k.
$6.40
BUK436-1000B TO-220. 1/2. 0. US $6.40/ lot. (10 Pieces). Price shown before tax. Delivery guarantee. BUK436-1000B TO-220. Delivery.
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Description: BUK436-1000B is a N-channel enhancement mode power field effect transistor (FET) manufactured by Philips. Features: - Low on-state resistance ...