BU508DX. DESCRIPTION. ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A. ·Built-in Integrated Diode. APPLICATIONS. ·Designed for use in large screen ...
~BU508DX. DESCRIPTION. • High Voltage-VCEs= 1500V(Min.) • Collector Current- lc = 8.0A. • Built-in Integrated Diode. APPLICATIONS. • Designed for use in large ...
BU508DX. DESCRIPTION. ·With TO-3PML package. ·High voltage,high speed. ·Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits of ...
BU508DX Transistor Datasheet pdf, BU508DX Equivalent. Parameters and Characteristics.
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal ...
BU508DX. MECHANICAL DATA. Dimensions in mm. Net Mass: 5.88 g. Fig.12. SOT399; The seating plane is electrically isolated from all terminals. Notes. 1. Refer to ...
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DESCRIPTION • With TO-3PML package • High voltage,high speed • Built-in damper diode. APPLICATIONS • For use in horizontal deflection circuits
BU508DX BU508DX; Silicon Diffused Power Transistor . High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated ...
The BU508DX is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU508DX transistor has a positively charged layer between two ...
