BSO215C ; Power - Max. 2W ; Operating Temperature. -55°C ~ 150°C (TJ) ; Mounting Type. Surface Mount ; Package / Case. 8-SOIC (0.154", 3.90mm Width).
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain. connection. PCB is vertical without blown air.
BSO215C-VB is a SOP8 packaged Dual-N+P-Channel channel MOSFETs. The product features Trench Technology, with Vds at ±30V; Vgs at 20（±V）; and Ida at ±8A.
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BSO215C 8-SO MOSFET N+P 20V 3.7A 8-SOIC ; FET Feature, Logic Level Gate ; Drain to Source Voltage (Vdss), 20V ; Current - Continuous Drain (Id) @ 25 C · 3.7A ; Rds ...
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BSO215C datasheet PDF download, Infineon Technologies Transistors - FETs, MOSFETs - Arrays BSO215C Specifications: MOSFET N/P-CH 20V 3.7A 8SOIC.
BSO215 Datasheet. Part #: BSO215C. Datasheet: 158Kb/13P. Manufacturer: Infineon Technologies AG. Description: SIPMOS Small-Signal-Transistor. 1 Results.
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Overview of BSO215C. Mosfet Array 20V 3.7A 2W Surface Mount 8-SO. Key Features. Fast switching MOSFET for SMPS; Optimized technology for notebook DC/DC ...
BSO215C. Description, MOSFET N/P-CH 20V 3.7A 8SOIC. BSO215C - Infineon Technologies. BSO215C Datasheet Page 1. BSO215C Datasheet Page 2. BSO215C Datasheet Page ...
BSO215C ; DESCRIPTION: MOSFET N/P-CH 20V 3.7A 8SOIC ; Manufacturer : Infineon Technologies ; Current - Continuous Drain (Id) @ 25°C : 3.7A ; Drain to Source Voltage ...