s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose, Power Choke ; Inductance Range: 145 microH ; Rated DC Current: 1700 ...
Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and ...
BSN274; BSN274A. N-channel enhancement mode vertical D-MOS transistor. Page 2. April 1995. 2. Philips Semiconductors. Product specification. N-channel ...
N-channel enhancement mode vertical D-MOS transistor · BSN274 datasheet pdf Philips Download BSN274 datasheet from. Philips, pdf
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PHILIPS TRANSISTOR BSN274 OEM 610625-1 USED IN VARIOUS APPLICATIONS ; Quantity. 5 available ; Item Number. 184563223075 ; Compatible Brand. Universal ; Type.
Mar 23, 2005 · Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in ...
BSN274 SPECIFICATIONS ; Drain-source On Resistance-Max, 8.0 ohm ; DS Breakdown Voltage-Min, 270.0 V ; Feedback Cap-Max (Crss), 15.0 pF ; FET Technology, METAL-OXIDE ...
BSN274 Datasheet. Part #: BSN274. Datasheet: 51Kb/8P. Manufacturer: NXP Semiconductors. Description: N-channel enhancement mode vertical D-MOS transistor.
BSN274 PHILIPS Discrete Semiconductors - Jotrin Electronics
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Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets ...