N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications.
BSN10A SPECIFICATIONS ; Drain-source On Resistance-Max, 20.0 ohm ; DS Breakdown Voltage-Min, 50.0 V ; Feedback Cap-Max (Crss), 5.0 pF ; FET Technology, METAL-OXIDE ...
N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications. PINNING...
Description. The BSN10A-3SXG series power modules are open frame DC-DC converters using non-isolated buck-boost technologies and synchronous rectifier ...
BSN10 Datasheet. Part #: BSN10. Datasheet: 76Kb/8P. Manufacturer: NXP Semiconductors. Description: N-channel enhancement mode vertical D-MOS transistors.