BSH202 ... Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and ...
BSH202,215 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 30 V ; Current - Continuous Drain (Id) @ 25°C · 520mA (Ta) ; Drive Voltage (Max Rds ...
In stock
BSH202,215 Nexperia MOSFET BSH202/SOT23/TO-236AB datasheet, inventory, & pricing.
In stock
This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. Features ...
$0.12
BSH202,215 Nexperia $0.1175 - 30V 520mA 417mW 900mΩ@10V,280mA 1.9V@1mA 1PCSPChannel SOT-23 MOSFETs ROHS datasheet, price, inventory C183272.
In stock
The BSH202 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely ...
BSH202,215 Nexperia MOSFET BSH202/SOT23/TO-236AB datasheet, inventory & pricing.
The BSH202 is supplied in the. SOT23 subminiature surface mounting package. LIMITING VALUES. Limiting values in accordance with the Absolute Maximum System ...
Chemical content BSH202 ; Polymer, Epichlorohydrin/o-Cresol/Formaldehyde polymer (generic), 29690-82-2, 0.95584 ; Phenolic resin, Proprietary, 0.43668 ...
In stock
BSH202,215NEXPERIA ; Power dissipation. 0.17W ; Case. SOT23, TO236AB ; Gate-source voltage. ±20V ; On-state resistance. 0.9Ω ; Mounting. SMD.