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BSH111,215 Nexperia MOSFET N-CH TRNCH 55V 335MA datasheet, inventory, & pricing.
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BSH111,215 ; Input Capacitance (Ciss) (Max) @ Vds. 40 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 830mW (Tc) ; Operating Temperature. -65°C ~ 150°C (TJ).
Features and benefits · Low threshold voltage · Very fast switching · Trench MOSFET technology · ElectroStatic Discharge (ESD) protection > 3 kV HBM ...
View datasheets for BSH111 by Nexperia USA Inc. and other related components here ... BSH111. N-channel enhancement mode field-effect transistor. Product data Rev ...
Apr 26, 2002 · Product availability: BSH111 in SOT23. 2. Features s TrenchMOS™ technology s Very fast switching s Low threshold voltage s Subminiature ...
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23.
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The BSH111 is characterized by its low on-state resistance (RDS(on)), which significantly reduces conduction losses and enhances overall device performance.
BSH111 MOSFET. Datasheet pdf. Equivalent. Type Designator: BSH111 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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NXP BSH111,215 Qty of 100 per Lot MOSFET N-CH TRNCH 55V 335MA ; Item Number. 134620084698 ; Brand. NXP ; MPN. BSH111,215 ; Accurate description. 4.9 ; Reasonable ...
Download the BSH111,215 datasheet from Nexperia. NEXPERIA - BSH111, 215 - MOSFET Transistor, N Channel, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V.