R1 included. Ruggedness in class-B operation. The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the.
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Specifications ; Id - Continuous Drain Current: 6 A ; Vds - Drain-Source Breakdown Voltage: 65 V ; Rds On - Drain-Source Resistance: - ; Operating Frequency: 175 ...
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
Part Number: BLF245 Manufacturer: P1dB Product Description: RF Power Transistor, 0.005 to 0.175 GHz, 30 W, 13 dB, 28 V, VDMOS, SOT-123A. Design Information.
BLF245,112 ; Technology. MOSFET (Metal Oxide) ; Configuration. N-Channel ; Frequency. 175MHz ; Gain. 15.5dB ; Voltage - Test. 28 V.