Sep 4, 1995 · SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. VCBO collector-base voltage open emitter. -. -. 20. V. VCEO collector-emitter voltage.
NPN 7 GHz wideband transistor BFG591. FEATURES. High power gain ; Low noise figure. High transition frequency. Gold metallization ensures ; excellent ...
BFG591 Transistor Datasheet pdf, BFG591 Equivalent. Parameters and Characteristics.
plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body.