Aug 24, 1999 · SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. VCEO collector-emitter voltage open base. -. -. 18. V. IC. DC collector current.
BFG35,115 NXP Semiconductors RF Bipolar Transistors NPN 10V 150mA 4GHZ datasheet, inventory, & pricing.
$0.45
BFG35,115 ; Part Status. Obsolete ; Transistor Type. NPN ; Voltage - Collector Emitter Breakdown (Max). 18V ; Frequency - Transition. 4GHz ; Noise Figure (dB Typ @ f).
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage ...
NXP eIQ for next generation of edge applications: Highly scalable, area and power efficient machine learning accelerator core architecture. 10 ...
In stock
10PCS NXP BFG35 NPN 4 GHz wideband transistor NEW ; Model. BFG35 ; MPN. BFG35 ; Accurate description. 4.9 ; Reasonable shipping cost. 4.9 ; Shipping speed. 5.0.
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities ...
Order BFG35,115 NXP at RFMW, Ltd. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry.
Rf Wideband Transistor, Npn, 18V, 4Ghz, 3-Sot-223, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:18V; Transition Frequency:4Ghz; ...