Apr 20, 2007 · BFG193. 1. 1. 2. 3. 4 ... ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type. Marking. Pin Configuration. Package.
BFG193. DESCRIPTION. ·Low Noise Figure. NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz. ·High Gain. ︱S21e︱2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f ...
BFG193. DESCRIPTION. • Low Noise Figure. NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz. • High Gain. I S2ie I2= 13.5 dB TYP. @VCE= 8 V,lc = 30 mA,f = 900 ...
BFG 193 E6433 ; Power - Max. 600mW ; DC Current Gain (hFE) (Min) @ Ic, Vce. 70 @ 30mA, 8V ; Current - Collector (Ic) (Max). 80mA ; Operating Temperature. 150°C (TJ).
€0.99
BFG193 Siemens Silicon bipolar NPN RF transistor, SOT-223 Polarity: NPN, Collector-emitter voltage (Vce max): 12 V, Transition frequency (f T ): 8 GHz, ...
BFG 193 E6433 Infineon Technologies Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR datasheet, inventory, & pricing.
Part #: BFG193. Download. File Size: 48Kbytes. Page: 6 Pages. Description: NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For ...
In stock
10PCS INFINEON BFG193 NPN Silicon RF Transistor New SOT223 · xihu888 (3444) · 99.6% positive feedback ...
$3.98
BFG193 SOT-223 Si RF Transistors fT ; UPC. Does not apply ; Brand. INFINEON ; Accurate description. 4.7 ; Reasonable shipping cost. 4.6 ; Shipping speed. 4.9.
isc Silicon NPN RF Transistor BFG193DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 = 13.5 dB TYP.