[PDF] BF909; BF909R N-channel dual gate MOS-FETs - NXP Semiconductors
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Nov 19, 2007 · BF909; BF909R. VDS =5V; Tj = 25 °C. RG1 = 120 kΩ (connected to VGG). Fig.12 Drain current as a function of gate 2 voltage; typical values ...
plastic surface-mounted package; reverse pinning; 4 leads. Buy Options; Operating Features; Environmental; Quality; Shipping; Discontinuance and Replacement ...
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BF909R,215 NXP Semiconductors RF MOSFET Transistors Dual N-Channel 7V 40mA 200mW datasheet, inventory, & pricing.
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and ...
Apr 25, 1995 · BF909; BF909R. VDS =5V; Tj = 25 °C. RG1 = 120 kΩ (connected to VGG). Fig.12 Drain current as a function of gate 2 voltage; typical values ...
BF909R,235 ; Technology. MOSFET (Metal Oxide) ; Configuration. N-Channel Dual Gate ; Frequency. 800MHz ; Gain. - ; Voltage - Test. 5 V.
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Download ： N-channel dual gate MOS-FETs. • Short channel transistor with high forward transfer. • High forward transfer admittance. We will reply you ASAP.
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The NXP BF909R represents a pinnacle of innovation in the field of discrete semiconductor technology. This product is a high-performance N-channel silicon ...
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Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) SOT-143R T/R.
BF909R Datasheet. Part #: BF909R. Datasheet: 148Kb/11P. Manufacturer: NXP Semiconductors. Description: N-channel dual gate MOS-FETs. 4 Results.