SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. VDS drain-source voltage. -. -. 12. V. ID drain current.
plastic surface-mounted package; reverse pinning; 4 leads. Buy Options; Operating Features; Environmental; Quality; Shipping; Discontinuance and Replacement ...
Specifications ; Transistor Polarity: N-Channel ; Technology: Si ; Id - Continuous Drain Current: 40 mA ; Vds - Drain-Source Breakdown Voltage: 12 V, 12 V.
BF908WR,115 NXP USA Inc. | Discrete Semiconductor Products
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BF908WR,115 ; Configuration. N-Channel Dual Gate ; Frequency. 200MHz ; Gain. - ; Voltage - Test. 8 V ; Current Rating (Amps). 40mA.
Dual N Channel Rf Mosfet, 12V, 40Ma, 4-Sot-343R, Full Reel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:40Ma; Power Dissipation:300Mw; ...
Apr 25, 1995 · SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. VDS drain-source voltage. −. −. 12. V. ID drain current.
DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage ...
General description. 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits
Product Overview :Trans RF MOSFET N-CH 12V 0.04A 4-Pin(3+Tab) CMPAK T/R; Lifecycle Status:Obsolete. RoHS; PB free. Specifications.
$0.33
Nov 26, 2023 · BF908WR,115 NXP datasheet PDF, 10 pages, view BF908WR,115 Specifications online, Trans RF MOSFET N-CH 12V 0.04A 4Pin(3+Tab) CMPAK T/R.
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