BF1101WR ; Replacement part(s): BF1211WR. ; Packing: REEL-Reel 11¼" Q1/T1 in LargePack ; Min. Package Quantity: 10000 ; Min. Order Quantity: 10000 ; Value. VDS [max] ...
May 14, 1999 · Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect ...
Specifications ; Transistor Polarity: N-Channel ; Technology: Si ; Id - Continuous Drain Current: 30 mA ; Vds - Drain-Source Breakdown Voltage: 7 V, 7 V.
$0.46
Order today, ships today. BF1101WR,115 – RF Mosfet 5 V 12 mA 800MHz CMPAK-4 from NXP USA Inc.. Pricing and Availability on millions of electronic components ...
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against ...
Part #: BF1101WR. Download. File Size: 399Kbytes. Page: 15 Pages. Description: N-channel dual-gate MOS-FETs. Manufacturer: NXP Semiconductors.
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Features. Short channel transistor with high; forward transfer admittance to input; capacitance ratio; Low noise gain controlled amplifier; up to 1 GHz ...
FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier to 1 GHz Partly internal ...
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$1.04
BF1101WR,135 CMPAK-4 MOSFET N-CH 7V DUAL SOT343R ; Current Rating, 30mA ; Noise Figure, 1.7dB ; Current - Test, 12mA ; Power - Output, - ; Voltage - Rated, 7V.