BDT65B. 100. BDT65C. 120. VEBO. Emitter-Base Voltage. 5. V. IC. Collector Current ... BDT65B. 100. BDT65C. 120. VCE(sat)-1. Collector-Emitter Saturation Voltage.
BDT65B Transistor Datasheet pdf, BDT65B Equivalent. Parameters and Characteristics.
N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications.
£3.99
Weight, 0.01 kg. Case, TO220. Type, Transistor Silicon NPN. Manufacturer, NXP Semiconductors. Vbr CEO, 100. Max. PD (W), 125. t(on) Delay (S), 2.5u.
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Sep 22, 2020 · Part Number, BDT65B. Manufacturer, INCHANGE. Title, NPN Transistor. Description, ·Collector Current -IC= 12A ·High DC Current Gain-hFE= ...
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications.
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic ...